Xiaoxu ZHAO

A vital challenge in nanoscience and nanotechnology is to precisely design and manufacture nanomaterials at the atomic level. By combining molecular beam epitaxy and scanning transmission electron microscope, Xiaoxu Zhao systematically studied and designed a library of low-dimensional quantum materials at the atomic scale. He made a great contribution to the development of next-generation nanoelectronic and spintronic devices.

He demonstrated the possibility of fabricating and modifying the edges, dopants, defects, and grain boundaries in low-dimensional quantum materials with atomic precision. A full range of physical properties can be precisely tuned by defect engineering or doping.

Particularly, he applied a new formula to create a fresh atomic library of 2D materials, which were named “ic-2D” to specify that their type was based on the self-intercalation of natural atoms into the gaps between the layers of the material.

He also tuned the properties of such materials from non-ferromagnetism to ferromagnetism and the formation of the spin-frustrated Kagome lattice. His work demonstrates the prosperity of ultrathin 2D materials, and can further reveal new properties to transform logical memory devices. This new type of materials has been patented and Zhao is discussing with TSMC their potential applications in ultra-thin ferromagnetic memory devices.