Photo of Chen Wang

Computer & electronics hardware

Chen Wang

Developing fully adaptable devices based on new materials to efficiently promote breakthroughs in post-Moore's era chips.

Year Honored
2023

Organization
Tsinghua University

Region
China

Hails From
China
Before joining Tsinghua University, Chen Wang worked in Silicon Valley for well-known chip companies such as Intel and Lam Research, responsible for core R&D of the next generations of high-performance chips. He has R&D capabilities in advanced chip device/architecture design, materials, processes integration, validation, tape-out, and yield improvement, and has received the Intel Recognition Award​.

Currently, Chen focuses on bridging novel chip materials with post-Moore's era chips, conducting multi-dimensional systematic basic research and integrative applied research on novel chip materials, next-generation semiconductor processes, new-principle based high-performance devices, multi-mode integrated microsystems chips, and next-generation chips​.

Chen founded the specially designed NEXT Mini-Fab to break the barriers between lab and fab in chip research, developing unique post-Moore's era chip research based on novel materials, new-principle based devices, and new developed processes.

He took the lead in proposing a novel material system of atomic layer semiconductor molecular superlattice, providing a solution to the material bottleneck in developing new high-performance semiconductor devices.

Facing the strong quantum effects of interconnection materials at the nanoscale in the post-Moore's era, Chen developed a new generation interconnection material and process suitable for nanometer scale node​.

In the field of 3D device integration, Chen broke through the exetremely challenging constraints of 3D device integration by developing new intermediate junction layer designs and processes, which have been commercialized. Additionally, he achieved wafer-level multi-modal stereoscopic integrated microsystem chip verification by developing highly integrable through-silicon via materials and processes.