Yating Wan

Her research team has innovatively developed various silicon-based lasers and photodetectors, including high-performance microcavity lasers, multi-wavelength mode-locked lasers with excellent RF performance, photodetectors with superior dark current performance, and on-chip systems that do not require isolators​. These technologies have greatly advanced the development of high-speed silicon-based transceiver technology. Moreover, she collaborated with Intel in heterogeneous integration of QD lasers with silicon photonics, successfully bonding un-patterned III-V quantum dot thin films onto silicon wafers followed by fabrication of photonic integrated circuits. This technology not only improved device performance but also increased economic feasibility, with the ultimate goal of extending these high-performance light sources to 300mm wafers. This technology is expected to open new possibilities for optical communication and will lead to innovations in integrated quantum technology and next-generation optical computing​. Addressing the two core issues of silicon-based light sources and silicon-based integration technology in silicon photonics, Yating has achieved breakthroughs in high-temperature robust high-performance light sources and on-chip integration technology. Furthermore, she will strive to advance this technology to advanced semiconductor research institutions and production lines, ensuring its significant value in practical applications.